Impact of mechanically applied strain on Auger recombination in InGaAs multiple quantum wells
Abstract
We present the results of direct measurements of the effect of mechanically applied biaxial strain on Auger recombination rates in InGaAs quantum wells grown on InP. By mounting these structures on a flexible membrane, we applied strain mechanically rather than by changing the quantum well alloy fraction. Specifically, we employed time-resolved photoluminescence spectroscopy to probe the recombination dynamics in the degenerate carrier regime. From these measurements, we extract the non-degenerate cubic Auger coefficient C30. We found that applying 1.59% tensile biaxial strain increased the Auger C30 coefficient by 325% in one of our samples. These results support the hypothesis that the mechanical strain induced by heteroepitaxy plays a direct role in mitigating Auger recombination in InP-based telecommunication-range lasers.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Killian N. Dickson
Department of Physics, University of Colorado Boulder 1 , Boulder, Colorado 80309,
Y. Lange Simmons
Department of Physics, University of Colorado Boulder 1 , Boulder, Colorado 80309,
Amberly F. Ricks
Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,
Alec M. Skipper
Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,
Andrew F. Briggs
Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,
Aaron J. Muhowski
Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,
Seth R. Bank
Juliet T. Gopinath
Department of Electrical, Computer, and Energy Engineering, University of Colorado Boulder 1 , 425 UCB, Boulder, Colorado 80309,