Hybrid improper ferroelectricity and phase transition in La2Sr(Sc1− <i>x</i> In <i>x</i> )2O7 ceramics

W Wei Yi Huang (Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,) Z Zheng Duan Zhang (Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,) Z Zhe Guo S Shu Ya Wu (Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,) X Xiao Qiang Liu (Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,) X Xiang Ming Chen (Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,)

Abstract

Oxygen octahedral rotation is essential for hybrid improper ferroelectrics (HIFs), but interlayer rumpling will compete with oxygen octahedron rotation, leading to the suppression of ferroelectricity in layered perovskite materials containing trivalent cations at the B-site. In the present work, single-phase dense La2Sr(Sc1−xInx)2O7 ceramics with double-layered Ruddlesden–Popper structures have been prepared, and the presence of room-temperature HIF is evidenced by the ferroelectric hysteresis loops. The polar A21am phase is adopted at room temperature, and it will transform into a nonpolar Amam phase above the Curie temperature. The Curie temperature increases linearly with the content of In3+ cation and with decreasing tolerance factor, whereas the ferroelectric polarization decreases with the substitution of In3+ cation at the B-site owing to the suppression of oxygen octahedral rotation. The present work demonstrates the room-temperature HIF in La2Sr(Sc1–xInx)2O7 ceramics and emphasizes the essential role of tolerance factor in determining the Curie temperature.

Article Details

Volume / Issue Vol. 127, Issue 23
Published December 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

W

Wei Yi Huang

Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,

Z

Zheng Duan Zhang

Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,

Z

Zhe Guo

S

Shu Ya Wu

Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,

X

Xiao Qiang Liu

Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,

X

Xiang Ming Chen

Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310058,