Hopping conduction in quasi-1D titanium trisulfide layered nanoribbons

Abstract

Quasi-one-dimensional (quasi-1D) layered nanoribbons (NRs) are being extensively investigated for their potential applications in next-generation nanoelectronics and optoelectronics. Understanding electrical conduction in such NRs is essential for designing the devices. In this work, we provide insights into hopping conduction mechanisms in NR transistors based on titanium trisulfide (TiS3), a quasi-1D layered semiconductor with distinctive anisotropic properties. We report both linear and nonlinear current–voltage characteristics over a temperature range of 5–300 K. The thermal evolution of the nonlinear characteristics exhibits power-law scaling and collapses onto a single universal curve when scaled by temperature. Our findings suggest that the nonlinear conduction is dominated by rare-chain hopping, having its origins in the disorders in TiS3.