High-power GeSn photodetector for 2-<i>μ</i>m RoF system
Abstract
A radio-over-fiber (RoF) link simplifies the base station and network structure, adapting to the trends of high capacity and rapid development in modern communication. The development of 2-μm-band links improves the capacity of communication systems, which can solve future optical fiber capacity crises. In this work, a relaxed high-Sn-content GeSn absorption layer was grown on a Si substrate, and high-power GeSn photodetectors were fabricated. The photodetectors achieved a low dark current with a cutoff wavelength of about 2930 nm. The GeSn photodetectors had a saturated photocurrent of up to 70 mA operating in the 2-μm-wavelength range and a 3-dB bandwidth of approximately 1.6 GHz. The results provide a technical reference for the application of GeSn 2-μm detectors in RoF links.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Jinlai Cui
Jun Zheng
Department of Hepatic Surgery and Liver Transplantation Centre
Xiangquan Liu
Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Key Laboratory of New Concept Sensors and Molecular Materials Shaanxi Normal University Xi'an 710119 P.R. China
Yiyang Wu
Jiayi Li
Qinxing Huang
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Yuhua Zuo
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Zhi Liu
Laboratory of Atmospheric Environment and Pollution Control
Buwen Cheng
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,