High power and feedback-resilient single-state operation in an InAs/GaAs quantum dot laser

M Mingzhao Shi (LTCI Télécom Paris, Institut Polytechnique de Paris 1 , 19 place Marguerite Perey, Palaiseau 91120,) H Heming Huang M Mario Dumont (Department of Electrical and Computer Engineering, University of California 2 , Santa Barbara, California 93106,) J John E. Bowers F Frédéric Grillot (LTCI Télécom Paris, Institut Polytechnique de Paris 1 , 19 place Marguerite Perey, Palaiseau 91120,)

Abstract

This paper demonstrates the exceptional optical feedback resilience of an InAs/GaAs quantum dot Fabry–Pérot laser, enabled by an unusually large excited state to ground-state threshold current ratio. This wide separation effectively suppresses gain competition and nonlinear coupling, allowing the device to maintain spectral purity and dynamic stability under optical feedback levels up to 16.6%, even when biased at 50 times the ground-state threshold current at room temperature. These findings further highlight the intrinsic robustness of quantum dot lasers, still positioning them as promising candidates for isolator-free operation in silicon photonics and co-packaged optics platforms, as well as for low-noise and feedback-resilient photonic systems.

Article Details

Volume / Issue Vol. 128, Issue 8
Published February 23, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

M

Mingzhao Shi

LTCI Télécom Paris, Institut Polytechnique de Paris 1 , 19 place Marguerite Perey, Palaiseau 91120,

H

Heming Huang

M

Mario Dumont

Department of Electrical and Computer Engineering, University of California 2 , Santa Barbara, California 93106,

J

John E. Bowers

F

Frédéric Grillot

LTCI Télécom Paris, Institut Polytechnique de Paris 1 , 19 place Marguerite Perey, Palaiseau 91120,