High-performance triple-band ultraviolet photodetector based on mixed-phase InGaO thin film for material identification
Abstract
The wavelength-dependent nature of material reflectance in the ultraviolet (UV) range makes multi-band UV response analysis an effective technique for material identification. In this work, a triple-band UV photodetector was constructed on the In2O3-Ga2O3 (InGaO) mixed-phase thin films. By incorporating In into Ga2O3 via plasma-enhanced chemical vapor deposition method, the bandgap of the mixed-phase InGaO thin films was modulated to 4.64 eV, extending the spectral response range to cover UVA (365 nm), UVB (295 nm), and UVC (255 nm) bands. This broadband photoresponse enables quantitative analysis of material-specific UV reflectance signatures, offering a reliable basis for material differentiation. Integrating a 5 × 4 photodetector array with convolutional neural networks, a precise identification and an accurate imaging of geometrically identical materials (Al, Ag, Si, and Au) were realized. For Al, Ag, and Si, this system achieves an overall accuracy exceeding 95%. This work proposes an efficient strategy for nondestructive surface inspection and material recognition by combining multi-spectral sensing with intelligent data processing.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Yucheng Hou
Xiaobo She
College of Integrated Circuit Science and Engineering and National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,
Xiang Wang
Xiwu Huang
College of Integrated Circuit Science and Engineering and National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,
Lei Li
Yingxu Wang
Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210023, and , Nanjing 210023,
Xupeng Yang
College of Integrated Circuit Science and Engineering and National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,
Jiaqing Yuan
College of Integrated Circuit Science and Engineering and National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,
Lingfei Li
School of Integrated Circuits, Zhejiang University 2 , Zhejiang 310027,
Changtai Xia
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 3 , Shanghai 201800,
Shan Li
Institute of Solid State Chemistry, Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering
Yufeng Guo
Weihua Tang
Yu Liu