High-performance pulsed light detector based on the transverse thermoelectric effect of the <i>c</i>-axis inclined BiCuTeO:Ag<i>x</i> films
Abstract
The transverse thermoelectric (TTE) effect, arising from the anisotropic Seebeck coefficient of a material, demonstrates significant potential for applications in rapid-response pulsed light detection. In this work, high-sensitivity TTE voltages were obtained in c-axis tilted BiCuTeO:Agx films prepared using pulsed laser deposition technology. Under the irradiation of 308 nm pulsed lasers, the film with x = 1.5 at. % demonstrated TTE voltages with an amplitude of 40 V, accompanied by a normalized sensitivity of 2 (V/mJ)/mm2, rise and decay times of 52 and 195 ns, respectively. The normalized sensitivity surpasses that of numerous materials used for TTE effect investigation. These TTE voltages, characterized by high sensitivity, rapid response times, and stable performance, underscore the potential applicability of the BiCuTeO:Agx films in high-performance self-powered ultraviolet pulsed light detection.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
Guoying Yan
Hebei Key Lab of Optic-Electronic Information Materials, The College of Physics Science and Technology, Hebei University , 071002 Baoding,
Xiao Zhang
Xizhen Yuan
Hebei Key Lab of Optic-Electronic Information Materials, The College of Physics Science and Technology, Hebei University , 071002 Baoding,
Yipeng Luo
Hebei Key Lab of Optic-Electronic Information Materials, The College of Physics Science and Technology, Hebei University , 071002 Baoding,
Zhaoyu Mi
Hebei Key Lab of Optic-Electronic Information Materials, The College of Physics Science and Technology, Hebei University , 071002 Baoding,
Mingjing Chen
Shufang Wang