High-performance GaSb-based interband cascade lasers with a top hybrid cladding

W Wenxiang Huang (Raytron Research, Raytron Technology CO., LTD 3 , Huaxiu RD 66, Wuxi 214000,) S Shiyu Hu (Applied Materials Division) J Junjie Tu (Raytron Research, Raytron Technology CO., LTD 1 , Huaxiu RD 66, Wuxi 214000,) P Peng Wang W Wenquan Ma (Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083,) Y Yanhua Zhang J Jianliang Huang (Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083,)

Abstract

We report high-performance GaSb-based interband cascade lasers (ICLs) with a top hybrid cladding and operating around 3.5 μm at room temperature. Unlike the conventional superlattice (SL) claddings in GaSb-based ICLs, the top cladding of the present ICLs consisted of an n-SL, followed by an n+-InAs0.91Sb0.09 layer, while their bottom claddings entirely consisted of an n-SL. This “asymmetric” waveguide design is potentially advantageous, since it improves the active-core optical confinement factor, as well as the overall thermal conductance, especially for epitaxial-side-down mounted devices. When operated in pulsed mode, the broad-area ICL featured a characteristic temperature of 57 K and a threshold current density as low as 95 A/cm2 at 25 °C, which is the lowest ever reported for an ICL operating at a similar temperature. The narrow-ridge device processed from the same wafer, operated in continuous-wave (CW) mode up to a temperature as high as 100 °C, with a CW threshold current density of only 150 A/cm2 at 20 °C, although the current leakage was appreciable at the sidewalls.

Article Details

Volume / Issue Vol. 126, Issue 6
Published February 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

W

Wenxiang Huang

Raytron Research, Raytron Technology CO., LTD 3 , Huaxiu RD 66, Wuxi 214000,

S

Shiyu Hu

Applied Materials Division

J

Junjie Tu

Raytron Research, Raytron Technology CO., LTD 1 , Huaxiu RD 66, Wuxi 214000,

P

Peng Wang

W

Wenquan Ma

Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083,

Y

Yanhua Zhang

J

Jianliang Huang

Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083,