High-performance BST:MgO memristor with optoelectronic synaptic plasticity for bio-inspired visual memory

J Jingjuan Wang (New Cornerstone Science Laboratory, State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, and National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering) Z Zeyun Wang P Pengyu Hao (Intelligent Sensor Network Engineering Research Center of Hebei Province, Hebei Key Laboratory of Optoelectronic Information and Geo-Detection Technology, College of Information Engineering, Hebei GEO University 1 , Shijiazhuang 050031,) X Xiaobing Yan

Abstract

In the era of big data, traditional computing paradigms are confronted with numerous challenges. However, artificial neural networks offer an effective approach to break through these bottlenecks by emulating the information processing mechanisms of the human brain. This work presents a typical memristor based on the Pt/BST:MgO/LSCO/STO structure, featuring excellent cycling performance, concentrated distribution of high/low resistance states, and superior retention capability. The device enables stable modulation of conductance under electrical regulation, while its current variation under light pulse stimulation correlates with neural excitability and achieves the transition from short-term memory to long-term memory. Furthermore, the device demonstrates sensitivity to both light intensity and duration. A 5 × 5 array was further constructed to mimic synaptic behaviors analogous to human visual perception by utilizing this characteristic. Finally, by integrating synaptic plasticity with convolutional neural network, the system achieves up to 96% accuracy in image recognition and classification tasks. This study paves the way for high-performance memristors in advanced neuromorphic computing and artificial intelligence applications.

Article Details

Volume / Issue Vol. 127, Issue 20
Published November 17, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

J

Jingjuan Wang

New Cornerstone Science Laboratory, State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, and National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials, College of Chemistry and Chemical Engineering

Z

Zeyun Wang

P

Pengyu Hao

Intelligent Sensor Network Engineering Research Center of Hebei Province, Hebei Key Laboratory of Optoelectronic Information and Geo-Detection Technology, College of Information Engineering, Hebei GEO University 1 , Shijiazhuang 050031,

X

Xiaobing Yan