High-efficiency phase transition of 2H-molybdenum ditelluride films on diverse substrates

X Xiaowen Zhang M Maolin Chen N Ning Zhao (Institute of Photochemistry and Photofunctional Materials) C Chen Liu Y Yuxuan Huang (State Key Laboratory of Natural and Biomimetic Drugs, School of Pharmaceutical Sciences) J Junzhu Li (Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) M Meng Tang A Aitian Chen (School of Physics) H Hang Liu (Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay) X Xiangpeng Ou D Dongxing Zheng (Physical Science and Engineering Division (PSE)) U Udo Schwingenschlögl Y Yating Wan B Bo Tian (Hubei Provincial Clinical Research Center for Alzheimer’s Disease, Brain Science and Advanced Technology Institute, Tianyou Hospital, School of Medicine, Wuhan University of Science and Technology) X Xixiang Zhang (Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.)

Abstract

The synthesis of p-type two-dimensional (2D) semiconductor 2H-MoTe2 films on various dielectric substrates is essential for realizing multilayer architectures for electronic and optoelectronic devices. However, achieving high-efficiency and complete 2H phase fabrication on diverse substrates is challenging. In this study, a multipoint nucleation approach was proposed for achieving controlled phase transitions of MoTe2 films via space confinement in the CVD growth process. This interstitial environment limited Te evaporation and considerably enhanced the reactant collision probability, leading to a high nucleation density of 2H-MoTe2 films. Using the proposed approach, large-area 2H-MoTe2 films were fabricated in ∼30 min. This high-efficiency phase-transition approach has promising implications for the industrial fabrication of large-scale 2D semiconductor films and other potential applications in electronic and optoelectronic devices.

Article Details

Volume / Issue Vol. 126, Issue 16
Published April 21, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (15)

X

Xiaowen Zhang

M

Maolin Chen

N

Ning Zhao

Institute of Photochemistry and Photofunctional Materials

C

Chen Liu

Y

Yuxuan Huang

State Key Laboratory of Natural and Biomimetic Drugs, School of Pharmaceutical Sciences

J

Junzhu Li

Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,

M

Meng Tang

A

Aitian Chen

School of Physics

H

Hang Liu

Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay

X

Xiangpeng Ou

D

Dongxing Zheng

Physical Science and Engineering Division (PSE)

U

Udo Schwingenschlögl

Y

Yating Wan

B

Bo Tian

Hubei Provincial Clinical Research Center for Alzheimer’s Disease, Brain Science and Advanced Technology Institute, Tianyou Hospital, School of Medicine, Wuhan University of Science and Technology

X

Xixiang Zhang

Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.