HfSe2(1-X)Te2X alloy channel transistor with semimetal HfTe2 contact electrodes
Abstract
We have demonstrated series ternary HfSe2(1-x)Te2x single crystalline alloys can be synthesized by a general chemical vapor transport approach. These alloys were verified to exhibit composition-dependent bandgap tunability (from 1.1 to 0 eV) by growth process control. Such characteristic offers a feasible way to construct HfSe2(1-x)Te2x alloy channel transistors using Dirac semimetal HfTe2 as contact electrodes, which shows negligible Schottky barrier height. Notably, the HfSe1.8Te0.2 channel transistor with a channel length of 9.48 μm on a 14 nm h-BN dielectric achieves a balance performance with current Ion/Ioff ratio of 9.5 × 104 and an Ion of 0.828 μA/μm. The current investigation of alloy engineering offers a feasible way of developing high-performance HfSe2-based beyond-silicon electronics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (11)
Yuxiang Wang
Key Laboratory of Photochemical Conversion and Optoelectronic Materials & CAS-HKU Joint Laboratory on New Materials
Boyuan Di
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,
Yijia Jiang
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,
Jie Yu
Shiwan Zou
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,
Liqiang Chen
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,
Shijie Liu
Ziyi Dong
Jintian Li
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,
Haixin Chang
Wenfeng Zhang