He-induced semi-insulating microcolumns for high-voltage leakage current suppression in <i>β</i> -Ga2O3 Schottky barrier diodes
Abstract
Localized semi-insulating regions in β-Ga2O3 are important for modulating the interfacial electric field and leakage characteristics of high-voltage devices. In this work, a high density of acceptor defects, including VGa and Hei, was introduced into the n-type Ga2O3 matrix by He-ion implantation, enabling the in situ formation of semi-insulating microcolumns in Ga2O3. These semi-insulating microcolumns effectively reduce the interfacial electric field near the Schottky junction and decrease the effective anode area of the direct metal/semiconductor contact, thereby significantly suppressing the reverse leakage current. The fabricated Ga2O3 SIMC-SBDs exhibit a leakage current nearly two orders of magnitude lower than that of conventional SBDs at a reverse voltage of 1000 V, while maintaining a breakdown voltage of 1807 V and a specific on-resistance of 4.1 mΩ cm2. This structure provides a viable approach to the design of β-Ga2O3 SBDs with high blocking capability and low leakage current while simplifying the fabrication process.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Chunyan Chen
Huile Zhang
College of Materials Science and Engineering, College of Electronics and Information Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,
Yudi Tu
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University 2 , Shenzhen 518060,
Haihong Wu
Shanghai Key Laboratory of Green Chemistry and Chemical Processes, State Key Laboratory of Petroleum Molecular & Process Engineering, School of Chemistry and Molecular Engineering
Zhongwei Jiang
College of Materials Science and Engineering, College of Electronics and Information Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,
Kangkai Fan
College of Materials Science and Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,
Yu Xu
Zihao Huang
State Key Laboratory of Bioinspired Interfacial Materials Science, School of Chemistry
Yiyang Li
Wolfson Catalysis Centre, Department of Chemistry
Yutong Wu
Bo Wang
Xinke Liu
College of Materials Science and Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,