Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Abstract
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in the laser performance have been bottlenecked by the limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers with an AlGaAs nanomembrane transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The uniform formation of this nanometer-thin ALD-Al2O3 interlayer and structural integrity of the grafted heterojunction are confirmed in STEM. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (21)
Jie Zhou
Daniel Vincent
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706,
Sudip Acharya
Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Solomon Ojo
Department of Electrical Engineering, University of Arkansas 2 , Fayetteville, Arkansas 72701,
Yang Liu
Yifu Guo
College of Physics, Qingdao University 1 , Qingdao 266071,
Alireza Abrand
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology 4 , Rochester, New York 14623,
Jiarui Gong
Dong Liu
Hefei National Research Center for Physical Sciences at the Microscale, School of Chemistry and Materials Science, National Synchrotron Radiation Laboratory
Samuel Haessly
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706,
Jianping Shen
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706,
Shining Xu
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706,
Yiran Li
Yi Lu
Hryhorii Stanchu
Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,
Luke Mawst
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706,
Parsian K. Mohseni
Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology 4 , Rochester, New York 14623,
Kai Sun
Zetian Mi
Zhenqiang Ma
Shui-Qing Yu
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,