Giant orbital Hall effect and field-free magnetization switching in rare-earth samarium/platinum metallic heterostructures

Y Yuanhao Deng (School of Physics and Mechanics, Wuhan University of Technology 1 , 430070 Wuhan,) J Junwen Wei (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) Y Yixin Wang (State Key Laboratory of Molecular Engineering of Polymers) X Xinkai Xu Z Zhiyong Zhong (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) F Feiming Bai (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) X Xiaoli Tang Q Qinghui Yang L Lichuan Jin (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,)

Abstract

Orbital current refers to the flow generated by transmitting the orbital angular momentum of electrons. Compared to spin current, orbital current exhibits distinct advantages, including lower critical current density for magnetization switching, longer propagation distances, and enhanced stability in high-temperature environments. However, the effective utilization of orbital currents remains underexplored. This study reports a giant torque efficiency in Sm/Pt metallic heterostructures, enabling highly efficient magnetization switching. Spin-torque ferromagnetic resonance measurements reveal a tenfold enhancement in torque efficiency (ξ = 0.10 ± 0.02) for the Sm/Pt/Py system compared to Pt/Py. This enhancement originates from the dominant contribution of orbital current. Furthermore, the Sm/Pt/Co/Pt heterostructure exhibits a low critical switching current density (Jsw+ < 3.98 × 106 A/cm2), demonstrating a tenfold improvement in switching efficiency over conventional Pt/Co/Pt systems. We have also achieved field-free switching across all tested thicknesses of the Sm. These metallic heterostructures, combining large effective orbital Hall angles, low thermal dissipation, and compatibility with semiconductor integration, hold significant promise for large-scale applications in orbitronic devices.

Article Details

Volume / Issue Vol. 127, Issue 12
Published September 22, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Y

Yuanhao Deng

School of Physics and Mechanics, Wuhan University of Technology 1 , 430070 Wuhan,

J

Junwen Wei

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

Y

Yixin Wang

State Key Laboratory of Molecular Engineering of Polymers

X

Xinkai Xu

Z

Zhiyong Zhong

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

F

Feiming Bai

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

X

Xiaoli Tang

Q

Qinghui Yang

L

Lichuan Jin

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,