Giant enhancement of spin–orbit torques with ultrathin high-<b> <i>κ</i> </b> dielectric insertion at the Pt/Co interface

S Shubham Bhatt (Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016,) S Sadat Riyaz (Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016,) T Tamkeen Farooq (Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016,) P Pinki Yadav (Center for Applied Research in Electronics, Indian Institute of Technology 1 , Delhi 110016,) R Rahul Mishra

Abstract

Achieving high spin–orbit torque (SOT) efficiency in heavy metal/ferromagnet (HM/FM) heterostructures is crucial for the development of energy-efficient spintronic devices. Among various factors, the HM/FM interface plays a pivotal role in determining the overall SOT efficiency. In this study, we examined the effect of introducing an ultrathin (∼0.2 nm) dusting layer of various dielectric oxides at the Pt/Co interface on the strength of SOT. Remarkably, the incorporation of TiOx—a high-κ dielectric—at the interface results in an 80%–100% enhancement in damping-like SOT. This significant improvement is attributed to the formation of high-dielectric TiOx islands at the interface, which act as additional scattering centers that facilitate spin current generation. Notably, this enhancement in SOT efficiency was achieved without adversely affecting the system's resistivity. Furthermore, we observed that the SOT efficiency scales with the dielectric constant of the interfacial oxide layer. These findings underscore the vital influence of interfacial dielectric properties in modulating SOT efficiency and present a promising strategy for advancing the performance of spintronic devices.

Article Details

Volume / Issue Vol. 127, Issue 7
Published August 18, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

S

Shubham Bhatt

Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016,

S

Sadat Riyaz

Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016,

T

Tamkeen Farooq

Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016,

P

Pinki Yadav

Center for Applied Research in Electronics, Indian Institute of Technology 1 , Delhi 110016,

R

Rahul Mishra