Gelatin electric double-layer side-gated FETs: Capacitive coupling mechanism for label-free detection of coptis alkaloids
Abstract
Coptis chinensis (cc) was widely used in traditional Chinese medicine for the treatment of various diseases, and its quality evaluation directly influenced clinical efficacy and safety. Traditional analytical methods, such as chromatographic or mass spectrometric techniques, were limited by high equipment costs and complex operational procedures. Here, a gelatin (Gel) side-gated double-layer field-effect transistor (GGDL-FET) was designed for highly sensitive detection of cc. The electric double-layer (EDL) capacitance of GGDL-FET reached 12.2 μF with 2 wt. % Gel. The superposition effect of electric fields 1 and 2 (E1 and E2) enhanced the gate control capability, thus contributed to a significant increase in channel current (∼374.4%). Furthermore, berberine (BBR) as the main components of cc was first quantified, and the incorporation of BBR increased the ion concentration of Gel electrolyte as well as the EDL capacitance since the quaternary ammonium salt group in its structure produced more positive charges, which enhanced the gate controllability and led to an obvious increase in the channel current. Subsequently, cc samples with varying concentration gradients were introduced into Gel. The resulting changes of the channel current exhibited consistent behavior with BBR alone, demonstrating a concentration-dependent response. The device detected cc with concentrations of 1, 2, and 3 wt. %. Thus, the concentration of BBR in cc could be evaluated by analyzing the changing trend of channel current, which provided a reference for the quality assessment of cc.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Yaodong Liu
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology 1 , Tianjin 300384,
Junqing Wei
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology 1 , Tianjin 300384,
Linqing Zhou
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology 1 , Tianjin 300384,
Xingyu Du
Yuankai Yang
Advanced Space Propulsion and Energy Laboratory (ASPEL), School of Astronautics, Beihang University 1 , Beijing 102206,
Zhehang Wang
School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University 1 , Tianjin 300072,
Kuibo Lan
School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University 1 , Tianjin 300072,
Guoxuan Qin
School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University 1 , Tianjin 300072,