Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures
Abstract
Germanium (Ge) is recognized as a highly promising substrate for a broad spectrum of electronic, optical, and quantum applications, owing to its exceptional properties, including high charge carrier mobility, strong spin-orbit coupling, and its behavior as a quasi-direct semiconductor. However, the electron transfer effect in Ge, similar to the Gunn effect in GaAs, which induces negative differential resistance, has received relatively little attention thus far. This is likely due to the requirement for a well-defined material system and device architecture for its realization and usually at low temperatures.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Masiar Sistani
Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Vienna,
Ezgi Tatli
Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Vienna,
Lukas Wind
Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Vienna,
Raphael Behrle
Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Vienna,
François Lefloch
Sebastian Lellig
Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures 3 , CH-3602 Thun,
Xavier Maeder
Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures 3 , CH-3602 Thun,
Walter M. Weber
Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Vienna,
F. Murphy-Armando
Tyndall National Institute, University College Cork 5 , Lee Maltings Complex Dyke Parade, Cork T12R5CP,
Alois Lugstein