Fully optical switching memory based on an oxidized GQD–FeOx heterojunction with 106 negative photoconductance ratio

L Lie Luo (School of Physics and Electronic Science, Zunyi Normal University 1 , Zunyi 563006,) X Xiude Yang (School of Physics and Electronic Science, Zunyi Normal University 1 , Zunyi 563006,) P Ping Li B Bo Wu J Jin Ye (Department of Pharmaceutics, State Key Laboratory of Natural Medicines, China Pharmaceutical University) X Xiaofang Hu (Key Laboratory of Luminescence Analysis and Molecular Sensors, College of Artificial Intelligence, Southwest University 2 , Chongqing,) J Jie Li S Songling Wang (State Key Laboratory of Structural Chemistry, Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter 3 , Fuzhou 350002,) B Bai Sun (Frontier Institute of Science and Technology Interdisciplinary Research Center of Frontier science and technology State Key Laboratory for Strength and Vibration of Mechanical Structures Engineering Research Center of Key Materials for Efficient Utilization of Clean Energy of Shaanxi Province Xi'an Key Laboratory of Electronic Devices and Material Chemistry Institute of New Concept Sensors and Molecular Materials Shaanxi Key Laboratory of New Conceptual Sensors and Molecular Materials Xi'an...) G Guangdong Zhou

Abstract

A fully optical control device can provide positive photoconductance memory (PPM) and negative photoconductance memory (NPM), enabling the device to execute fully optical computing. However, the NPM triggering involves complex modulation and small ratio. Here, we propose an oxidized GQD–FeOx heterojunction optoelectronic memory that integrates the PPM and NPM effects into the same cell, thus building all-in-one fully optical computing. The PPM originates from the electrons that are generated from neutral Vo sites under low resistance state while the NPM effect with an ultrahigh ratio of 106 is contributed by the increase in neutral Vo under high resistance state. The theory calculation illustrates that the NPM effect heavily relies on the geometric confinement and partial reflections of the oxidized GQDs and the localization effect of the FeOx. This work provides a significant structure design and photogenerated electron dynamic for the development of fully optical computing.

Article Details

Volume / Issue Vol. 128, Issue 9
Published March 02, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

L

Lie Luo

School of Physics and Electronic Science, Zunyi Normal University 1 , Zunyi 563006,

X

Xiude Yang

School of Physics and Electronic Science, Zunyi Normal University 1 , Zunyi 563006,

P

Ping Li

B

Bo Wu

J

Jin Ye

Department of Pharmaceutics, State Key Laboratory of Natural Medicines, China Pharmaceutical University

X

Xiaofang Hu

Key Laboratory of Luminescence Analysis and Molecular Sensors, College of Artificial Intelligence, Southwest University 2 , Chongqing,

J

Jie Li

S

Songling Wang

State Key Laboratory of Structural Chemistry, Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter 3 , Fuzhou 350002,

B

Bai Sun

Frontier Institute of Science and Technology Interdisciplinary Research Center of Frontier science and technology State Key Laboratory for Strength and Vibration of Mechanical Structures Engineering Research Center of Key Materials for Efficient Utilization of Clean Energy of Shaanxi Province Xi'an Key Laboratory of Electronic Devices and Material Chemistry Institute of New Concept Sensors and Molecular Materials Shaanxi Key Laboratory of New Conceptual Sensors and Molecular Materials Xi'an...

G

Guangdong Zhou