Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film
Abstract
In the past, forming a Schottky contact on SnO2 with metal has been a significant challenge due to the surface electron accumulation layer on the SnO2 surface. In this study, we report a steady and reproducible Schottky contact between the Ni and the SnO2 (101) planes. Furthermore, we evaluate a quasi-vertical SnO2 Schottky diode. High-quality Nb:SnO2 and SnO2 single-crystal films with (101) plane orientation were grown sequentially on r-sapphire substrates by radio frequency magnetron sputtering in a mixed atmosphere of Ar and O2. By etching and liftoff, a Ni anode and an In cathode were deposited on SnO2 and Nb:SnO2, respectively, to make a Schottky diode. The diode has a Schottky barrier height of 0.64 eV and a specific on-resistance of 32 mΩ cm2, indicating good performance. X-ray photoelectron spectra reveal the upward band bending from bulk to surface of the (101) SnO2 film, which contributes to the formation of the Schottky contact with Ni.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Fengxin Liu
Qi Zhang
Yue Chen
State Key Laboratory of Natural Medicines and Jiangsu Key Laboratory of Drug Discovery for Metabolic Diseases, Center of Advanced Pharmaceuticals and Biomaterials
Qiang Li
Xingye Zhang
Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials, Research Center of Advanced Wide-bandgap Semiconductor Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science and Engineering, Hubei University 1 , 430062 Wuhan,
Kang Gao
Kuan Kuang
Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials, Research Center of Advanced Wide-bandgap Semiconductor Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science and Engineering, Hubei University 1 , 430062 Wuhan,
Haohua Xu
Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials, Research Center of Advanced Wide-bandgap Semiconductor Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science and Engineering, Hubei University 1 , 430062 Wuhan,
Shiheng Liang
Chuansheng Liu
School of Physics and Technology, Wuhan University 3 , Wuhan 430072,
Mingkai Li
Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials, Research Center of Advanced Wide-bandgap Semiconductor Materials and Devices, Hubei Key Laboratory of Polymer Materials, and School of Materials Science and Engineering, Hubei University 1 , 430062 Wuhan,
Yunbin He