Formation and stability of Ge nanocrystals in polymorph converted Ga2O3: Temperature-driven journey
Abstract
The influence of germanium (Ge) implantation on β-Ga2O3 followed by ex situ annealing through polymorph conversion in air at various temperatures (600–1100 °C) is studied. Atomic resolution aberration-corrected scanning transmission electron microscopy is employed to examine the structural and microstructural changes induced by the annealing process. The results show that the thermal annealing process leads to the formation of Ge nanocrystals, which subsequently disappear, leaving nano-voids inside the Ge-doped Ga2O3 matrix. In addition, the microstructure displays distinct crystallographic relationships in annealed β-Ga2O3 forming layers with well-defined interfaces. This work reveals the unique effects of Ge-implantation, demonstrating the possible functionalization of Ga2O3 with Ge nanocrystals.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
J. Garcia-Fernàndez
S. B. Kjeldby
Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo 1 , Oslo 0315,
L. J. Zeng
Department of Physics, Chalmers University of Technology 2 , Gothenburg 41296,
E. Olsson
Department of Physics, Chalmers University of Technology 2 , Gothenburg 41296,
L. Vines
Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo 1 , Oslo 0315,
Ø. Prytz
Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo 1 , Oslo 0315,