Formation and optical properties of indium nanoparticle arrays for deep-UV plasmonics
Abstract
We utilize a combined computational-experimental approach to examine the influence of indium nanoparticle (NP) array distributions on deep-ultraviolet (UV) plasmon resonances. For photon energies < 5.7 eV, analysis of ellipsometric spectra reveals an increase in silicon reflectance induced by indium NP arrays on silicon. For various energies in the range 5.7–7.0 eV, a decrease in reflectance is induced by the NP arrays. Similar trends in reflectance are predicted from finite-difference time-domain (FDTD) simulations using NP size distributions extracted from atomic-force micrographs as input. In addition, in the energy range of 7.4–9.2 eV, the FDTD simulations reveal reflectance minima, characteristic of localized surface plasmon resonances. Electron energy-loss spectroscopy collected from individual indium NPs reveals the presence of LSPR at ≈ 8 eV, further supporting the promise of indium NP arrays on silicon for deep-UV plasmonics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (11)
H. D. L. McKenna
Department of Materials Science and Engineering, University of Michigan 1 , Ann Arbor, Michigan 48109-2136,
B. Shrestha
E. Lu
Department of Electrical Engineering and Computer Science, University of Michigan 4 , Ann Arbor, Michigan 48109,
H. Lott
National Renewable Energy Laboratory 1 , Golden, Colorado 80401,
I. Subedi
Department of Physics and Astronomy, University of Toledo 2 , Toledo, Ohio 43606,
X. Chen
S. Hwang
Center for Functional Nanomaterials, Brookhaven National Laboratory 6 , Upton, New York 11973,
D. Zakharov
Center for Functional Nanomaterials, Brookhaven National Laboratory 6 , Upton, New York 11973,
N. J. Podraza
Department of Physics and Astronomy, University of Toledo 2 , Toledo, Ohio 43606,
J. C. Yang
Department of Chemical and Petroleum Engineering, University of Pittsburgh 5 , Pittsburgh, Pennsylvania 15261,
R. S. Goldman