Flatband-enabled catalysis of alkaline hydrogen evolution on kagome CoSn

S Shaojie Jing (College of Physics, Chongqing University 1 , Chongqing 401331,) Z Zhouhao Zhu (College of Physics and Center of Quantum Materials and Devices) D Di Wu Y Yuhan Gan J Jing Fan M Mingquan He (Low Temperature Physics Laboratory, College of Physics & Center of Quantum Materials and Devices, Chongqing University 1 , Chongqing 401331,) J Jiangping Ma (College of Physics, Chongqing University 1 , Chongqing 401331,) X Xiaoyuan Zhou (College of Physics and Institute of Advanced Interdisciplinary Studies) L Li-Yong Gan (College of Physics, Chongqing University 1 , Chongqing 401331,)

Abstract

Flatband materials offer a unique platform for catalysis due to their intrinsically localized electronic states and high density of states near the Fermi level. Here, we investigate the kagome intermetallic compound CoSn as a representative flatband catalyst for the hydrogen evolution reaction (HER) under alkaline conditions. First-principles calculations reveal that the CoSn(001) surface retains flatband features originating from Co dyz and dxz orbitals, which enhance hydrogen adsorption and facilitate water dissociation. Compared to elemental Co, CoSn exhibits significantly improved intrinsic activity, as confirmed by both theoretical analysis and experimental measurements. To further optimize catalytic performance, surface doping with 3d transition metals (X@CoSn, X = Ti, V, Cr, Mn, Fe, Ni) was employed. Among the dopants tested, Cr achieves the most favorable balance of HER energetics, exhibiting reduced water dissociation barriers and suitable adsorption strengths. A strong correlation between the dopant-modulated flatband center and OH* binding energy is established, demonstrating that flatband tuning directly governs surface reactivity. These findings highlight flatband engineering as an effective strategy for designing high-performance electrocatalysts.

Article Details

Volume / Issue Vol. 128, Issue 11
Published March 16, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

S

Shaojie Jing

College of Physics, Chongqing University 1 , Chongqing 401331,

Z

Zhouhao Zhu

College of Physics and Center of Quantum Materials and Devices

D

Di Wu

Y

Yuhan Gan

J

Jing Fan

M

Mingquan He

Low Temperature Physics Laboratory, College of Physics & Center of Quantum Materials and Devices, Chongqing University 1 , Chongqing 401331,

J

Jiangping Ma

College of Physics, Chongqing University 1 , Chongqing 401331,

X

Xiaoyuan Zhou

College of Physics and Institute of Advanced Interdisciplinary Studies

L

Li-Yong Gan

College of Physics, Chongqing University 1 , Chongqing 401331,