Field-free ultrafast magnetization reversal of a nanodevice by a chirped current pulse via spin-orbit torque

Y Yadong Liu (Institute for Advanced Materials and Technology) M M. T. Islam (State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 710049,) X X. S. Wang (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) X X. R. Wang (School of Science and Engineering, Chinese University of Hong Kong (Shenzhen) 2 , Shenzhen 518172,) T T. Min

Abstract

We investigate the magnetization reversal of a perpendicularly magnetized nanodevice using a chirped current pulse (CCP) via spin-orbit torques (SOTs). Our numerically simulated findings demonstrate that both the field-like (FL) and damping-like (DL) components of SOT in CCP can be efficiently utilized to induce ultrafast magnetization reversal without any symmetry-breaking means. For a wide frequency range of the CCP, the minimal current density is significantly smaller compared to the current density of conventional SOT-reversal. This ultrafast reversal is achieved due to the CCP triggering enhanced energy absorption (emission) of the magnetization from (to) the FL- and DL-components of SOT before (after) crossing over the energy barrier. We also verify the robustness of the CCP-driven magnetization reversal at room temperature. Moreover, this strategy is applicable also to induce field-free ultrafast and efficient switching of perpendicular synthetic antiferromagnetic and ferrimagnetic (SFi) nanodevices. The minimal current density of deterministic switching of the SFi system decreases significantly with the reduction of one layer's magnetization, mainly because the SOT amplitude is inversely proportional to the saturation magnetization. Therefore, this study enriches the basic understanding of field-free SOT-reversal and provides a way to realize ultrafast SOT-MRAM devices with various free layer designs.

Article Details

Volume / Issue Vol. 126, Issue 2
Published January 13, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

Y

Yadong Liu

Institute for Advanced Materials and Technology

M

M. T. Islam

State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 710049,

X

X. S. Wang

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

X

X. R. Wang

School of Science and Engineering, Chinese University of Hong Kong (Shenzhen) 2 , Shenzhen 518172,

T

T. Min