Ferroelectric transistor with tunable depolarization for artificial synapse with biphasic temporal response

Abstract

Artificial synapses with tunable temporal dynamics are the basic building blocks of brain-inspired information processing. In this Letter, we report a dual-gated ferroelectric transistor (FeFET) with tunable relaxation dynamics by introducing local charge trapping modulation to the semiconductor channel, which governs the depolarization field and relaxation of the ferroelectric domain. Independent engineering of the spike response current and the transition of relaxation dynamics are demonstrated in the FeFET by coupled modulation from both gate terminals. A biphasic temporal response and the sense of motion direction and velocity are shown to be possible based on a differential pair structure and a simple perceptron network. This work provides a viable route toward artificial synapses with rich plasticity in temporal dynamics for neuromorphic processing.