Fano interference in single-molecule transistors

Y Yiping Ouyang (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University 1 , Nanjing 210093,) R Rui Wang Z Zewen Wu D Deping Guo (College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University 1 , Chengdu 610101,) Y Yang-Yang Ju (College of Materials Science and Engineering) J Jun Chen M Minhao Zhang D Danfeng Pan (School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 6 , Nanjing 210023,) X Xuecou Tu S Shuai Zhang L Lin Kang J Jian Chen P Peiheng Wu X Xuefeng Wang (Beijing National Laboratory for Condensed Matter Physics) J Jianguo Wan (National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University 2 , Nanjing 210093,) W Wei Ji (Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics) X Xianghua Kong (Anhui Province Key Laboratory of Value-Added Catalytic Conversion and Reaction Engineering, School of Chemistry and Chemical Engineering) Y Yuan-Zhi Tan (State Key Laboratory for Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering) F Fengqi Song

Abstract

Quantum interference has been intensively pursued in molecular electronics to investigate and utilize coherent electron transport at the ultra-small level. An essential type of quantum interference with drastic destructive-constructive switching, known as Fano interference, has been widely reported in various kinds of nanoelectronics electronic systems, but not yet been electrostatically gating in a single-molecule device. Here, we fabricate the three-terminal single-molecule transistors based on the molecule with a long backbone and a side group to demonstrate the gate-controllable Fano interference. By applying bias and gate voltages, the two-dimensional differential conductance map shows the noncentrosymmetrical Fano patterns. Combined with the electron transport model and the first principles calculations, the resonant parameters of the Fano interference can unveil the coupling geometry of the junction and the spatial distribution of the resonant states. Our findings provide an instrumental method to induce and utilize the quantum interference behaviors at the molecular level.

Article Details

Volume / Issue Vol. 126, Issue 10
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (19)

Y

Yiping Ouyang

National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University 1 , Nanjing 210093,

R

Rui Wang

Z

Zewen Wu

D

Deping Guo

College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University 1 , Chengdu 610101,

Y

Yang-Yang Ju

College of Materials Science and Engineering

J

Jun Chen

M

Minhao Zhang

D

Danfeng Pan

School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 6 , Nanjing 210023,

X

Xuecou Tu

S

Shuai Zhang

L

Lin Kang

J

Jian Chen

P

Peiheng Wu

X

Xuefeng Wang

Beijing National Laboratory for Condensed Matter Physics

J

Jianguo Wan

National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University 2 , Nanjing 210093,

W

Wei Ji

Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics

X

Xianghua Kong

Anhui Province Key Laboratory of Value-Added Catalytic Conversion and Reaction Engineering, School of Chemistry and Chemical Engineering

Y

Yuan-Zhi Tan

State Key Laboratory for Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering

F

Fengqi Song