Fabry–Pérot resonance cavity enabling highly polarization-sensitive long-wave infrared detector via double-layer linear grating
Abstract
Au gratings are widely employed as the primary architecture in infrared linear polarization detectors; however, they suffer from significant optical losses in the long-wave infrared range, resulting in limited extinction ratios. In this study, we present a highly polarization-sensitive Au/SiO2 double-layer linear grating integrated into InAs/GaSb superlattice-based long-wave infrared detectors. Finite-difference time-domain simulations demonstrate that by leveraging the Fabry–Pérot resonance cavity within the SiO2 grating, the structure enhances the transmittance of TM-polarized light while suppressing that of TE-polarized light, thereby significantly improving the extinction ratio. Compared to conventional Au grating-based polarization detectors, the proposed device exhibits superior responsivity to TM-polarized light and a higher extinction ratio across the 8–14 μm wavelength range. Specifically, the extinction ratio improves by a factor of 1.25 at 9.2 μm. This approach offers an effective strategy for advancing high-performance long-wave infrared linear polarization detectors.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Xiangyu Zhang
Dongwei Jiang
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Wen He
New Cornerstone Science Laboratory, MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry
Ye Zhang
Yaqi Zhao
State key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Feng Gao
Hui Xie
Hongyue Hao
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Donghai Wu
Guowei Wang
Ordos Laboratory
Yingqiang Xu
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Xiaoning Guan
School of Integrated Circuits, Beijing University of Posts and Telecommunications 4 , Beijing 100876,
Dongbo Wang
Jinzhong Wang
School of Materials Science and Engineering
Zhichuan Niu