Evidence for stabilization of ferroelectricity in WO3 thin films under anisotropic epitaxial strain

Z Zhuotong Sun (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) N Nives Strkalj (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) M Ming Xiao Z Ziyi Yuan S Sunil Taper (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) X Xuan Trung Nguyen (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) B Babak Bakhit (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) A Atif Jan (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) W William C. Witt (Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.) S Simon M. Fairclough C Caterina Ducati C Chris J. Pickard B Bartomeu Monserrat (Department of Materials Science and Metallurgy) G Giuliana Di Martino (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,) J Judith L. MacManus-Driscoll (Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,)

Abstract

Interest in ferroelectric materials for processing, memory, and sensing devices has been re-energized in recent years by the discovery of nanoscale ferroelectricity in insulating binary oxides based on hafnia and zirconia deposited in complementary metal-oxide-semiconductor-compatible processes. However, their large bandgap, very limited doping range, and challenges of high coercive voltage leave the search open for an industry-friendly, low-coercive-voltage, semiconducting ferroelectric for photosensitive and resistive-switching applications. Here, we report the deposition of epitaxial WO3 films at 350°C using a chemical atmospheric process. In these films, anisotropic epitaxial strain imposed by the substrate promotes the stabilization of a polar phase at room temperatures with out-of-plane polarization, evidenced by x-ray diffraction, scanning transmission electron microscopy, piezoresponse force measurements, and Raman spectroscopy. Exploring ferroelectricity in ultrathin epitaxial WO3 films could provide a platform for polarization-controlled electronic and optical applications.

Article Details

Volume / Issue Vol. 128, Issue 14
Published April 06, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (15)

Z

Zhuotong Sun

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

N

Nives Strkalj

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

M

Ming Xiao

Z

Ziyi Yuan

S

Sunil Taper

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

X

Xuan Trung Nguyen

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

B

Babak Bakhit

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

A

Atif Jan

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

W

William C. Witt

Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.

S

Simon M. Fairclough

C

Caterina Ducati

C

Chris J. Pickard

B

Bartomeu Monserrat

Department of Materials Science and Metallurgy

G

Giuliana Di Martino

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,

J

Judith L. MacManus-Driscoll

Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,