Erratum: “Strain dependence of Auger recombination in 3 <b> <i>μ</i> </b> m GaInAsSb/GaSb type-I active regions” [Appl. Phys. Lett. <b>116</b> , 262103 (2020)]
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Kenneth J. Underwood
Department of Physics, University of Colorado Boulder 1 , Boulder, Colorado 80309,
Andrew F. Briggs
Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,
Scott D. Sifferman
Department of Electrical and Computer Engineering, University of Texas Austin 2 , Austin, Texas 78758,
Varun B. Verma
National Institute of Standards and Technology 3 , 325 Broadway, Boulder, Colorado 80305,
Nicholas S. Sirica
Center for Integrated Nanotechnologies, Los Alamos National Laboratory 4 , Los Alamos, New Mexico 87545,
Rohit P. Prasankumar
Sae Woo Nam
Kevin L. Silverman
National Institute of Standards and Technology 3 , 325 Broadway, Boulder, Colorado 80305,
Seth R. Bank
Juliet T. Gopinath
Department of Electrical, Computer, and Energy Engineering, University of Colorado Boulder 1 , 425 UCB, Boulder, Colorado 80309,