Applied Physics Letters

Erratum: “Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM” [Appl. Phys. Lett. <b>120</b>, 102901 (2022)]

W Wensheng Wang K Ko Nakamura (Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,) T Takashi Eshita (Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,) K Kenji Nomura K Kazuaki Takai (Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,) H Hideshi Yamaguchi (Fujitsu Limited 3 , Tokyo 105-7123,) S Satoru Mihara (Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,) Y Yukinobu Hikosaka (Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,) H Hitoshi Saito M Manabu Kojima (Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,)
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Article Details

Volume / Issue Vol. 126, Issue 25
Published June 23, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (10)

W

Wensheng Wang

K

Ko Nakamura

Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,

T

Takashi Eshita

Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,

K

Kenji Nomura

K

Kazuaki Takai

Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,

H

Hideshi Yamaguchi

Fujitsu Limited 3 , Tokyo 105-7123,

S

Satoru Mihara

Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,

Y

Yukinobu Hikosaka

Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,

H

Hitoshi Saito

M

Manabu Kojima

Fujitsu Semiconductor Memory Solution Limited 1 , Yokohama 222-0033,

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