Er-driven magnetic tunability in FePt thin films investigated via high-throughput experiments and microstructure analysis for future HAMR media

D Daisuke Ogawa (National Institute for Materials Science (NIMS) 1 , Tsukuba, 305-0047,) Y Yuma Iwasaki J Jun Uzuhashi (National Institute for Materials Science 3 , Tsukuba, Ibaraki 305-0047,) Y Yuta Sasaki (National Institute for Materials Science (NIMS) 1 , Tsukuba, 305-0047,) M Masato Kotsugi Y Yukiko K. Takahashi (National Institute for Materials Science (NIMS) 1 , Tsukuba, 305-0047,)

Abstract

This study undertakes comprehensive experimental validations based on theoretical predictions of the impact of Er and Tm doping on the magnetic properties of FePt thin films. Initial theoretical investigations indicate that doping with rare earth elements may result in promising alterations to the magnetic properties of the FePt thin films, with Er doping in particular offering a promising avenue for further study. Experimental synthesis via a combinatorial high-throughput sputtering system, which enables precise control over the composition of FePt thin films, achieves the desired magnetic properties. Small quantities of dopants, specifically 0.35 at. % Er, substantially enhance the key magnetic properties of saturation magnetization (μ0Ms), anisotropy constant (Ku) at room temperature, and the Curie temperature (TC). Precise microstructural observations of a sample show that Er segregates at grain boundaries, voids, and the substrate/FePt interface, where Er preferentially replaces Fe sites. In other regions of the FePt grains, Er is not solid-soluble, and pure FePt and FePtEr form a composite material in the order of tens of nm. The incorporation of Er also influences the damping constant α. The findings of this study substantiate the intrinsic characteristics of Er-doped films, particularly the enhanced μ0Ms, Ku, and TC attainable with nominal dopant concentrations, and facilitate the realization of ultimate magnetic recording densities anticipated for future data storage technologies.

Article Details

Volume / Issue Vol. 126, Issue 25
Published June 23, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

D

Daisuke Ogawa

National Institute for Materials Science (NIMS) 1 , Tsukuba, 305-0047,

Y

Yuma Iwasaki

J

Jun Uzuhashi

National Institute for Materials Science 3 , Tsukuba, Ibaraki 305-0047,

Y

Yuta Sasaki

National Institute for Materials Science (NIMS) 1 , Tsukuba, 305-0047,

M

Masato Kotsugi

Y

Yukiko K. Takahashi

National Institute for Materials Science (NIMS) 1 , Tsukuba, 305-0047,