Enhancing spin–orbit torque in tri-layer devices with an ultra-thin light metal spacer
Abstract
The discovery of spin current generation through an additional ferromagnetic layer has unlocked new possibilities for spin–orbit torque (SOT) devices, particularly in tri-layer SOT configurations. This breakthrough facilitates field-free switching (FFS) with perpendicular magnetic anisotropy (PMA) under the influence of z-polarization. Despite this progress, a significant challenge persists in lowering the switching current density (JSW) in SOT devices, which remains roughly an order of magnitude higher than in spin-transfer torque devices. We incorporated an ultra-thin (1 nm) copper (Cu) spacer into a tri-layer SOT structure where the orange peel effect likely arose. This ultra-thin Cu layer, combined with the optimized Pt-based SO layer, resulted in approximately a 35% reduction in JSW compared to the scenario without Cu insertion. The damping-like torque efficiency was analyzed concerning the FFS performance at optimized Cu spacer thickness to support the finding of JSW reduction. Using magneto-optic Kerr effect measurements and micromagnetic simulations, we identified domain nucleation as the primary mechanism driving FFS, confirming the role of z-polarization in reducing JSW effectively. This study proposes a design that simultaneously addresses three key challenges of PMA, JSW, and FFS in current SOT systems.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (5)
Durgesh Kumar Ojha
Department of Materials Science & Engineering, National Yang-Ming Chiao-Tung University 1 , Hsinchu 30010,
Liang-Juan Chang
Mechanical and Mechatronics Systems Research Labs, Industrial Technology Research Institute (ITRI) 2 , Hsinchu County,
Yu-hui Wu
Wen-Yueh Jang
Powerchip Semiconductor Manufacturing Corporation 4 , Hsinchu 30010,
Yuan-Chieh Tseng
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University 1 , Hsinchu,