Enhancing meandering VO2 microwire bolometer sensitivity via confined electron layer
Abstract
VO2 bolometers offer excellent detection sensitivity, especially when temperature biased close to the transition temperature. We show here that a tunable-sensitivity bolometer with an extended range can be achieved using VO2 thin films using a specially designed gated meander device structure. While the electric field does not influence the transition temperature of the meandering microwire, a two-dimensional confined electron layer is observed to emerge upon the application of a lateral gate field, leading to improved photosensitivity, by up to 50%, over a wide range of incidence laser powers without any external temperature bias. Our results highlight that electric field control in VO2 facilitates low-power operation, underscoring its potential for energy-efficient and long-lasting electronic applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Arun Sehrawat
Department of Material Science and Engineering, Indian Institute of Technology 1 Delhi, New Delhi 110016,
Swapnendu Narayan Ghosh
Department of Material Science and Engineering, Indian Institute of Technology 1 Delhi, New Delhi 110016,
Amrita Singh
Souvik Haldar
Department of Material Science and Engineering, Indian Institute of Technology 1 Delhi, New Delhi 110016,
Sonika Singh
Department of School of Interdisciplinary Research, Indian Institute of Technology 2 Delhi, New Delhi 110016,
Ananya Borkotoky
Department of Electrical Engineering, Indian Institute of Technology Kanpur 5 , Kanpur 208016,
Amit Verma
Ankur Goswami
Department of Material Science and Engineering, Indian Institute of Technology 1 Delhi, New Delhi 110016,
Krishna B. Balasubramanian
Department of Material Science and Engineering, Indian Institute of Technology 1 Delhi, New Delhi 110016,