Enhancing contact triboelectrification by coupling interfacial spontaneous polarization and permittivity manipulation

H Haozhen Li X Xin Zhao G Guangzhong Xie Y Yuanjie Su (State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China , Chengdu 610054,)

Abstract

The electricity generation of triboelectric nanogenerators (TENGs) originates from charge transfer enabled by contact electrification. However, the inherent barrier between two contacting surfaces hampers the triboelectric charge transfer. There are mainly four ways to promote the triboelectrification of TENGs. While synergy among them has never been achieved. Herein, we reported an effective strategy to boost the triboelectric charge transfer efficiency by synergizing the strong ferroelectric polarization and high permittivity of embedded lead zirconate titanate fillers. The influence of interfacial polarization intensity and the dielectric permittivity, as well as corona poling, on the triboelectrification of composite film was systematically investigated. Notably, the switching of interfacial polarization direction renders an increase (207%) or a decrease (71%) in the triboelectric output in comparison with the non-poled counterpart. Theoretical modeling was established by combining Kelvin probe force microscopy characterization with the electron cloud overlap energy band derivation. This work not only offers unprecedented insight into the fundamental mechanism of triboelectrification but also opens up a possibility in the development of next-generation wearable electronics.

Article Details

Volume / Issue Vol. 126, Issue 5
Published February 03, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

H

Haozhen Li

X

Xin Zhao

G

Guangzhong Xie

Y

Yuanjie Su

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China , Chengdu 610054,