Enhanced photoresponse and polarization-sensitive photodetector coupling InGaN/GaN MQW heterojunction with Ag nanoparticles

L Liang Chen T Tingjun Lin (State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology 1 , Guangzhou 510641,) J Jixing Chai (State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology 1 , Guangzhou 510641,) Q Ququ Hao (State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology 1 , Guangzhou 510641,) L Lei Lei (Department of Molecular, Cell and Developmental Biology, University of California) J Jinrong Chen W Wenliang Wang G Guoqiang Li (School of Materials Science and Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China)

Abstract

InGaN-based pin-type visible light photodetectors (PDs), exhibiting enormous advantages of fast photoresponse speed and low noise, have drawn tremendous interest in visible light communication (VLC) applications. However, the insufficient light absorption capacity and low photoelectric conversion efficiency of InGaN-based pin heterojunction hinder the realization of high-sensitivity PDs for achieving this aim. Herein, plasmonic PDs based on InGaN/GaN multi-quantum wells (MQW) heterojunction with Ag nanoparticles (NPs) have been experimentally implemented, showing balanced abilities of enhanced photoresponse and polarization sensitivity in the blue light region. The PD's optimized responsivity, detectivity, and anisotropy ratio reach 0.176 A/W, 1.93 × 1010 Jones, and 1.395, respectively, under 405 nm illumination. The surface plasmon resonance-induced local field of Ag NPs enhances the electric field density and the light absorption density in the heterojunction region of InGaN/GaN MQWs, improving the photoresponse of PDs. This work proposes a valuable strategy for designing high-performance visible light PDs, providing an attractive stage for high-efficiency visible light communication applications.

Article Details

Volume / Issue Vol. 126, Issue 12
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

L

Liang Chen

T

Tingjun Lin

State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology 1 , Guangzhou 510641,

J

Jixing Chai

State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology 1 , Guangzhou 510641,

Q

Ququ Hao

State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology 1 , Guangzhou 510641,

L

Lei Lei

Department of Molecular, Cell and Developmental Biology, University of California

J

Jinrong Chen

W

Wenliang Wang

G

Guoqiang Li

School of Materials Science and Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China