Enhanced optical response of n-type doped InAs quantum dots through interface state inactivation

Abstract

Owing to the wide tuning range, high-temperature stability, flexible design, and fast recovery dynamics, quantum dots (QDs) have been widely used in many research fields, such as lasers, photodetectors, solar cells, and displays. Among these, III–V InAs/GaAs QDs are especially suited for infrared optoelectronic applications due to their strong working stability and enhanced light output efficiency. The doping technique has been admitted as a very effective method to enhance the modal gain and temperature insensitivity for InAs/GaAs QDs-based devices. Additionally, doping could modulate critical optical responses, like light absorption and carrier recovery dynamics, making these QDs ideal for ultrafast applications. In this work, p-type (Be) doping and n-type (Si) doping were introduced into multilayer QDs to mitigate the adverse effects of grown-in interface states, which were verified by temperature-dependent photoluminescence (PL) characterization. The results show a significant increase in PL intensity for n-doped samples, which was attributed to the effective suppression of interface states. This enhancement correlates with doping levels, with PL intensity increasing from 1.71 to 2.72 times as Si concentration rises from 1 × 1018/cm3 to 3 × 1018/cm3. In contrast, p-doped samples show a slight decrease in PL intensity and a 20 nm blueshift in PL emission peak, indicating different interdiffusion behaviors between In and Ga atoms compared to that in n-doped ones. By integrating with distributed Bragg mirrors, QD semiconductor saturable absorption mirrors were developed, where n-doped QDs presented superior performance in mode-locked ultrafast lasers with the shortest pulse width and highest output power.