Enhanced negative terahertz photoconductivity enabled by interfacial charge transfer in Te/graphene mixed-dimensional heterojunction
Abstract
Negative terahertz photoconductivity is a rare effect that holds great significance for numerous applications. However, the maintenance and enhancement of negative photoconductivity response still face a huge challenge. Here, combined with material selection and band alignment engineering, we have proposed a mixed-dimensional heterostructure comprised of 1D tellurium (Te) nanowires and 2D monolayer graphene. Intriguingly, the Te/graphene heterojunction could enhance negative terahertz photoconductivity by twice compared with graphene, following a transition from negative to positive photoconductivities. We have further performed first-principles calculations and characterizations to elucidate the type-I band alignment at the heterointerface, revealing the phenomena attributed to interfacial charge transfer. Our results provide in-depth physical insights into the carrier transport mechanism, which is crucial for further exploration of optoelectronic devices based on mixed-dimensional heterostructures.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Pujing Zhang
Longyu Shi
Zhiyuan Zhang
Huiwen Shi
Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Department of Physics, Capital Normal University 1 , Beijing 100048,
Haojing Wang
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 3 , Beijing 100190,
Guangwei She
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 3 , Beijing 100190,
Peijie Wang
Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Department of Physics, Capital Normal University 1 , Beijing 100048,
Wensheng Shi
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 3 , Beijing 100190,
Cunlin Zhang
Qingli Zhou