Enhanced magnetoelectric coupling in vertically aligned nanocomposite thin films via ferroelectric capping layer encapsulation
Abstract
Vertically aligned nanocomposite (VAN) thin films with strong magnetoelectric (ME) coupling and high magnetic anisotropy are promising for next-generation low-power storage devices. However, conventional self-assembled VANs often exhibit incomplete ME coupling due to exposed ferromagnetic (FM) phases above the ferroelectric (FE) matrix surface, which limits the strain-mediated interactions. Here, we propose a FE capping layer strategy to encapsulate exposed FM phases in VANs. This design not only increases perpendicular magnetic anisotropy from 3.08 × 104 to 9.49 × 104 J m−3 but also significantly improves both direct and converse ME coupling. The direct ME (DME) coefficient rises from 80 to 216 mV cm−1 Oe−1, while the converse ME coefficient increases from 6.32 × 10−10 to 8.17 × 10−10 s m−1, attributed to restored interfacial strain coupling. This work demonstrates that the encapsulation of FM phase by FE capping layer optimizes ME performance in VANs, offering a viable route for high-density magnetoelectronic applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Xiaoxuan Zhang
Weijun Zhang
Spin-X Institute, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology 1 , Guangzhou 511442,
Yongli Yu
Xiuqiao Liu
Chao Yun
Jinbo Yang
Institute of Condensed Matter and Material Physics, School of Physics
Judith L. MacManus-Driscoll
Department of Materials Science and Metallurgy, University of Cambridge 1 , Cambridge CB3 0FS,
Yanglong Hou
School of Materials
Rui Wu
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.