Enhanced breakdown strength and reduced polarization hysteresis in relaxor ferroelectric polymers with increased gamma phase content for energy storage capacitors

R Renfan Lin (State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, Institute of Microelectronics (IME), Shenzhen University 1 , Shenzhen 518060,) S Shuangwu Huang W Weiping Gong (Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University 2 , Huizhou 516001, Guangdong,) Q Qiyan Zhang (State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, Institute of Microelectronics (IME), Shenzhen University 1 , Shenzhen 518060,) Q Q. M. Zhang

Abstract

Polymer dielectric energy storage capacitors play a vital role in modern electronic and electrical power systems, particularly in high-voltage environments. However, achieving both high energy density and charge–discharge efficiency presents a significant challenge for next-generation applications that demand miniaturization and compact design. In this study, we present relaxor ferroelectric terpolymers with an increased gamma (γ)-phase content, prepared through a facile and scalable interfacial engineering approach that incorporates ultra-low amounts of graphene oxide. The γ-phase crystals in the terpolymer reduce hysteresis losses and generate numerous deep traps, resulting in enhanced performance. These terpolymers achieve a high energy density of up to 15.2 J/cm3 and an improved breakdown strength of 562 MV/m, representing enhancements of 62% and 39.8%, respectively, compared to the pristine terpolymer. The results suggest that tuning the phase structure of relaxor ferroelectric terpolymers offers a pathway to developing ferroelectric polymers with enhanced energy density and charge–discharge efficiency for energy storage capacitors.

Article Details

Volume / Issue Vol. 126, Issue 4
Published January 27, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

R

Renfan Lin

State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, Institute of Microelectronics (IME), Shenzhen University 1 , Shenzhen 518060,

S

Shuangwu Huang

W

Weiping Gong

Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University 2 , Huizhou 516001, Guangdong,

Q

Qiyan Zhang

State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, Institute of Microelectronics (IME), Shenzhen University 1 , Shenzhen 518060,

Q

Q. M. Zhang