Enhanced altermagnetic splitting through modulating altermagnetic-ferroelectric coupling in monolayer multiferroic Ti2S2O

Y Yuxin Yang (State Key Laboratory of Drug Research) K Kaixin Zou (Department of Micro/Nano Electronics, Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Engineering Research Center of Thin Film Optoelectronics Technology (Ministry of Education), Nankai University 1 , Tianjin 300350,) G Guang Wang (Key Laboratory of Functional Inorganic Materials Chemistry (Ministry of Education), School of Chemistry and Materials Science) D Da-Yong Liu (School of Physical Science and Technology, Nantong University 2 , Nantong 226019,) L Liang-Jian Zou (Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences 3 , Hefei 230031,) F Feng Lu (Department of Medical Oncology, Dana-Farber Cancer Institute) W Wei-Hua Wang

Abstract

Two-dimensional (2D) multiferroics hold significant potential for applications in nonvolatile devices due to their small size and low power consumption. However, practical multiferroics are extremely rare due to lack of mechanism that can simultaneously induce strong ferroelectric (FE) polarization and magneto-electric coupling. Here, we report a multiferroic monolayer Ti2S2O exhibiting ultra-strong coupling between altermagnetic (AM) and FE orderings based on first-principles calculations combined with tight-binding model analysis. Through biaxial compressive strain, the FE polarization of monolayer Ti2S2O is enhanced from 0.82 to 1.56 μC/cm2, and the AM splitting is increased from 0.07 to 0.43 eV. Moreover, the tight-binding model is constructed. Accordingly, the observed increase in AM splitting is attributed to enhanced anisotropic second-neighboring hopping between Ti-3dxy orbitals and the nearest-neighboring hopping between Ti-3dxy and S-3p orbitals mediated by strain-tunable FE distortions of non-magnetic O atoms. Our theoretical findings shed light on magneto-electric phenomena and the development of electrically controllable spintronic devices.

Article Details

Volume / Issue Vol. 127, Issue 7
Published August 18, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

Y

Yuxin Yang

State Key Laboratory of Drug Research

K

Kaixin Zou

Department of Micro/Nano Electronics, Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Engineering Research Center of Thin Film Optoelectronics Technology (Ministry of Education), Nankai University 1 , Tianjin 300350,

G

Guang Wang

Key Laboratory of Functional Inorganic Materials Chemistry (Ministry of Education), School of Chemistry and Materials Science

D

Da-Yong Liu

School of Physical Science and Technology, Nantong University 2 , Nantong 226019,

L

Liang-Jian Zou

Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences 3 , Hefei 230031,

F

Feng Lu

Department of Medical Oncology, Dana-Farber Cancer Institute

W

Wei-Hua Wang