Engineering low-resistance Ni/In2O3 contacts for BEOL compatible integration

Leo Raj Solay; Georgian Melinte; Ganesh Mainali; Dhanu Chettri; Patsy Arely Miranda Cortez; Zixian Jiang; Saravanan Yuvaraja; Na Xiao; Xiaohang Li

doi:10.1063/5.0296657

Engineering low-resistance Ni/In2O3 contacts for BEOL compatible integration

L Leo Raj Solay (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900,) G Georgian Melinte (Core Laboratories) G Ganesh Mainali (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) D Dhanu Chettri (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) P Patsy Arely Miranda Cortez (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) Z Zixian Jiang (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) S Saravanan Yuvaraja (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,) N Na Xiao X Xiaohang Li (Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900,)

Abstract

Reliable engineering of low-resistance metal semiconductor (M/S) contacts is critical for advancing indium oxide (In2O3) based semiconductor technologies. As device dimensions shrink to the micrometer regime, minimizing contact resistance becomes essential to ensure channel limited operation rather than contact dominated. In this study, we systematically optimized Ni/In2O3 contacts using mild rapid thermal annealing (RTA) at 250 °C in nitrogen ambient conditions compatible with back-end-of-line (BEOL) processing and evaluated their performance using the transfer line method (TLM). Ni/In2O3 TLM structures were fabricated via photolithography and liftoff, followed by RTA at varying durations. Quantitative TLM analysis demonstrated a substantial reduction in contact resistance (RC) to 6.24 Ω, normalized contact resistance (N · RC) to 1.25×10−1 Ω cm, specific contact resistivity (ρC) to 1.53×10−6 Ω cm2, and a short transfer length (LT) of 123 nm, all achieved without intentional doping or complex metallization. This process driven, BEOL compatible approach provides a robust route to low-resistance contacts in In2O3 thin films, enabling a reliable foundation for next generation low power, high performance oxide electronics.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 128, Issue 5

Published February 02, 2026

DOI 10.1063/5.0296657

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

L

Leo Raj Solay

Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900,

G

Georgian Melinte

Core Laboratories

G

Ganesh Mainali