Electro-optically co-modulated ZnS synaptic memristor for neuromorphic recognition systems
Abstract
Memristor-based neuromorphic computing offers a revolutionary strategy to address the limitations of traditional computing architectures. Developing synaptic memristors co-modulated by electrical and optical signals is crucial for realizing neural networks with high-efficiency parallel processing and in-memory computing, yet it remains a significant challenge. Herein, wide-bandgap zinc sulfide (ZnS) is introduced to design Ag/ZnS/FTO optoelectronic synaptic memristors. The devices verify reliable resistive switching (RS) behavior, primarily attributed to being dominated by sulfur vacancies (VS), with a narrow Set/Reset distribution (variation < 0.04/0.03 V), an On/Off ratio of ∼26, and a retention time exceeding 104 s. Under electrical, especially near-infrared light (808 and 980 nm) stimulation, these memristors accurately mimic diverse synaptic plasticity functions, including excitatory post-synaptic current, short-term/long-term memory, long-term potentiation/depression, paired-pulse facilitation/depression, spike-timing-dependent plasticity, spike-voltage-dependent plasticity, spike-dependent dynamic plasticity, spike-rate-dependent plasticity, and Ebbinghaus learning–forgetting behaviors. Notably, applying to handwritten digit recognition on the MNIST dataset, the system achieves an 88.25% classification accuracy, demonstrating its potential for practical neuromorphic applications. These findings open an avenue for the development of sulfide-based optoelectronic synaptic devices and advanced neuromorphic computing systems.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Hailong Li
Feng Sun
Hao Sun
Xiang Zhang
Zongjie Zhan
Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University , Lanzhou 730070,
Xiaofei Dong
Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University 3 , Lanzhou 730070,
Jianbiao Chen
Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University , Lanzhou 730070,
Xuqiang Zhang
Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University , Lanzhou 730070,
Jiangtao Chen
Yun Zhao
Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Shanghai Key Laboratory of Functional Materials Chemistry, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering
Wensheng Li
Yan Li