Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy
Abstract
Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we demonstrate an electrically pumped AlGaN-based laser diode operating in the UV-B band (280–315 nm). The device is grown by molecular beam epitaxy on a single-crystal AlN substrate and fabricated in a ridge-waveguide geometry. The laser diode operates at 298.5 nm and exhibits a relatively low threshold current density of 3.4 kA/cm2. Clear non-linear light–current characteristics and pronounced spectral narrowing with a full width at half maximum of 0.2 nm are measured above the threshold.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Huabin Yu
Xiamen University-Fujian Cancer Hospital Research Center of Metabolism and Cancer, State Key Laboratory for Cellular Stress Biology, Xiamen University
Shubham Mondal
Rui Shen
Department of Electrical Engineering and Computer Science, University of Michigan
Md Tanvir Hasan
David He
Jiangnan Liu
Samuel Yang
Minming He
Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109,
Omar Alkhazragi
Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109,
Danhao Wang
Mackillo Kira
Department of Electrical Engineering and Computer Science, University of Michigan 1 , Ann Arbor, Michigan 48109,
Parag Deotare
Department of Electrical Engineering and Computer Science, University of Michigan 1 , Ann Arbor, Michigan 48109,
Di Liang
Zetian Mi