Electric field tunable magnetic phase transition and magneto-optical effects in two-dimensional multiferroic Ti2F3 semiconductor

Y Yifan Zhang J Jiacheng Chen H Haoshen Ye (Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University 2 , Nanjing 211189,) Z Zhenxian Wu (School of Materials and Physics, China University of Mining and Technology 1 , Xuzhou 221116,) G G. P. Zhang (Department of Physics, Indiana State University 3 , Terre Haute, Indiana 47809,) M Mingqiang Gu (Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology 1 , Shenzhen 518055,) J Jianli Wang

Abstract

Two-dimensional single-phase magnetoelectric multiferroic semiconductors are attractive for the multifunctional spintronic nanodevices due to their cross coupling between coexisting magnetic and ferroelectric orders. However, experimentally synthesized two-dimensional magnetoelectric multiferroic materials are very rare to date because of the mutual exclusion between ferroelectricity and magnetism. Here, we predict a two-dimensional room-temperature ferromagnetic multiferroic Ti2F3 semiconductor through the first-principles calculations and Monte Carlo simulations. The Ti2F3 monolayer manifests an easy magnetization plane, and the magnitude of the out-of-plane polarization is 0.037 C/m2. Interestingly, the magnetic ground states of the Ti2F3 monolayer can be tuned by the electric field. Moreover, we explore the electric field tunable magneto-optical effects in the Ti2F3 monolayer. Our work provides more magnetoelectric multiferroic candidate materials and suggests an effective strategy to realize and probe the magnetic phase transition.

Article Details

Volume / Issue Vol. 127, Issue 15
Published October 13, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

Y

Yifan Zhang

J

Jiacheng Chen

H

Haoshen Ye

Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University 2 , Nanjing 211189,

Z

Zhenxian Wu

School of Materials and Physics, China University of Mining and Technology 1 , Xuzhou 221116,

G

G. P. Zhang

Department of Physics, Indiana State University 3 , Terre Haute, Indiana 47809,

M

Mingqiang Gu

Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology 1 , Shenzhen 518055,

J

Jianli Wang