Electric field modulated magnetic properties by strain transfer in nanocluster-assembled magnetoelectric heterostructures

G Guixin He (School of Physical Science and Technology and Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University 1 , Hohhot 010021,) T Tengfei Ma J Jianguo Niu W Wenyu Xing (School of Physical Science and Technology, and Inner Mongolia Key Lab of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021,) H Hong Chang (State Key Laboratory of Loess Science, Institute of Earth Environment, Chinese Academy of Sciences) X Xinger Zhao (School of Physical Science and Technology and Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University 1 , Hohhot 010021,) S Shifeng Zhao (School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,)

Abstract

Electric field control of magnetic properties in nanomaterials holds a significant prospect for high-density magnetic storage and sensors. Here, we demonstrate efficient electric field modulation of magnetic properties in nanocluster-assembled Ni0.74Co0.26/PMN-PT magnetoelectric heterostructures. Under the magnetic field of −44 Oe, electric field-induced tensile strain enhances the magnetization by 17.13% and shifts the coercive field by 10.3%. A key breakthrough resides in establishing the particle size dependence of electrical modulation. The critical size of 16.39 nm guarantees the optimal strain transfer under electric fields, where surface and bulk effects reach dynamic equilibrium. Furthermore, micromagnetic simulations firmly confirm that the magnetic property regulation by electric fields in nanocluster-assembled magnetoelectric heterostructures is via strain-mediated magnetic domain evolution. The sensitivity of the nanocluster size on the electrical control in cluster-assembled films advances the fundamental understanding and device applications for the converse magnetoelectric effect.

Article Details

Volume / Issue Vol. 127, Issue 11
Published September 15, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

G

Guixin He

School of Physical Science and Technology and Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University 1 , Hohhot 010021,

T

Tengfei Ma

J

Jianguo Niu

W

Wenyu Xing

School of Physical Science and Technology, and Inner Mongolia Key Lab of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021,

H

Hong Chang

State Key Laboratory of Loess Science, Institute of Earth Environment, Chinese Academy of Sciences

X

Xinger Zhao

School of Physical Science and Technology and Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University 1 , Hohhot 010021,

S

Shifeng Zhao

School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,