Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
Abstract
In this work, electric field-modulated AlGaN/GaN Schottky barrier diodes (SBDs) with an AlN back barrier layer and a thin GaN channel layer are demonstrated. Benefiting from the built-in electric field (EB) induced via the positively polarized charge at the AlGaN/GaN interface and the negatively polarized charge at the GaN/AlN interface, the composite electric field in the GaN channel is effectively suppressed, when the diodes are reverse-biased. Compared to traditional GaN buffer SBDs, the breakdown voltage of AlGaN/GaN SBDs with AlN back barrier layer increases from −585 to −1122 V while the power figure-of-merit increases from 215 to 777 MW/cm2.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (11)
Tao Zhang
Junjie Yu
Heyuan Chen
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071,
Yachao Zhang
Shengrui Xu
Xiangdong Li
Huake Su
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University 1 , Xi'an 710071,
Jiahao Chen
Spin-X Institute, School of Chemistry and Chemical Engineering, School of Biomedical Sciences and Engineering, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, State Key Laboratory of Luminescent Materials and Devices
Hongchang Tao
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University 1 , Xi'an 710071,
Yue Hao
Jincheng Zhang