Electric field control of nonlinear Hall effect in the type-II Weyl semimetal TaIrTe4

J Jiaju Yang (School of Science, Nanjing University of Posts and Telecommunications , Nanjing 210023,) L Lujun Wei (School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) Y Yanghui Li (School of Science, Nanjing University of Posts and Telecommunications , Nanjing 210023,) L Lina Chen W Wei Niu S Shuo Wang F Feng Li P Ping Liu (Chemistry Department) S Shuang Zhou Y Yong Pu (School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,)

Abstract

The nonlinear Hall effect (NLHE), as an important probe to reveal the symmetry breaking in topological properties of materials, opens up a dimension for exploring the energy band structure and electron transport mechanism of quantum materials. Current research primarily emphasizes the observation of intrinsic NLHE in various materials or the induction of NLHE responses through the artificial construction of twisted two-dimensional material systems. A key focus has been the modulation of NLHE signal strength, which is crucial for device performance. Theoretical predictions suggest that an applied electric field can enhance NLHE by modulating the Berry curvature dipole (BCD). Here, we report effective modulation of both the magnitude and sign of the NLHE in the type-II semimetal TaIrTe4 by applying additional constant electric fields of varying directions and magnitudes. Notably, the NLHE response strength is enhanced by 168 times compared to the intrinsic one at 4 K when a constant electric field of −0.5 kV/cm is applied along the b-axis of TaIrTe4. Scaling law analysis suggests that the enhancement results from the combined effects of the electric field on the intrinsic BCD and disorder scattering effect in TaIrTe4. This work not only provides insights into the properties of TaIrTe4 but also serves as a valuable reference for the development of electronic devices.

Article Details

Volume / Issue Vol. 127, Issue 3
Published July 21, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

J

Jiaju Yang

School of Science, Nanjing University of Posts and Telecommunications , Nanjing 210023,

L

Lujun Wei

School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

Y

Yanghui Li

School of Science, Nanjing University of Posts and Telecommunications , Nanjing 210023,

L

Lina Chen

W

Wei Niu

S

Shuo Wang

F

Feng Li

P

Ping Liu

Chemistry Department

S

Shuang Zhou

Y

Yong Pu

School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,