Efficient and stable CsPbBr3 perovskite quantum dots by dodecyl dimethyl betaine ligand toward light-emitting diode

Q Qingyu Xie (College of Physical Science and Technology, Yangzhou University 1 , Yangzhou 225002,) L Long Luo (Department of Chemistry, University of Utah, 315 S 1400 E, Salt Lake City, Utah 84112, United States) D Dongdong Yan D Daofu Wu X Xiaosheng Tang (School of Integrated Circuits, Chongqing University of Posts and Telecommunications 1 , Chongqing 400065, and , Chongqing 400065,) M Muzhi Cai (Institute of Optoelectronic Materials and Devices, China Jiliang University 5 , Hangzhou 310018,) R Ronglei Fan (School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 1 , 1 Shizi Street, Suzhou 215006,) W Wei Pei (College of Physics Science and Technology) S Shengnan Tian (School of Photoelectric Engineering, Changzhou Institute of Technology 2 , Changzhou 213032,) Y Yusong Tu (College of Physical Science and Technology, Yangzhou University 1 , Yangzhou 225002,) Y Yongfeng Liu (State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China)

Abstract

Lead halide perovskite quantum dots (PeQDs) have shown great potential for applications in light-emitting diodes (LEDs) due to their exceptional optoelectronic properties. However, the highly dynamic binding of conventional oleic acid (OA) and oleylamine (OAm) ligands to the surface of PeQDs significantly compromises their photoelectric properties and stability, which adversely affects the electroluminescence (EL) performance. Here, dodecyl dimethyl betaine (BS12), a ligand that can strongly bind to the PeQD surface, is introduced to stabilize the dynamic surface and passivate the surface defects of PeQDs. Experimental results and density functional theory calculations demonstrate that BS12 treatment can partially replace the dynamically bound OA/OAm ligands due to strong binding ability, significantly reducing surface defects in solution status and thus leading to more than a twofold increase in photoluminescence quantum yield. Furthermore, BS12 treatment enables improved film-forming ability, carrier transporting capacity, lower trap density, and enhanced film stability. Consequently, the EL performance of PeQD LEDs is markedly improved, especially with a 720% increase in operational lifetime. This work presents a promising strategy for synthesizing high-performance PeQDs.

Article Details

Volume / Issue Vol. 127, Issue 3
Published July 21, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Q

Qingyu Xie

College of Physical Science and Technology, Yangzhou University 1 , Yangzhou 225002,

L

Long Luo

Department of Chemistry, University of Utah, 315 S 1400 E, Salt Lake City, Utah 84112, United States

D

Dongdong Yan

D

Daofu Wu

X

Xiaosheng Tang

School of Integrated Circuits, Chongqing University of Posts and Telecommunications 1 , Chongqing 400065, and , Chongqing 400065,

M

Muzhi Cai

Institute of Optoelectronic Materials and Devices, China Jiliang University 5 , Hangzhou 310018,

R

Ronglei Fan

School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 1 , 1 Shizi Street, Suzhou 215006,

W

Wei Pei

College of Physics Science and Technology

S

Shengnan Tian

School of Photoelectric Engineering, Changzhou Institute of Technology 2 , Changzhou 213032,

Y

Yusong Tu

College of Physical Science and Technology, Yangzhou University 1 , Yangzhou 225002,

Y

Yongfeng Liu

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China