Effects of hydrostatic compression and tension on silicon-vacancy centers in diamond

Y Yunliang Yue (School of Information Engineering, Yangzhou University 1 , Yangzhou 225127,) M Min Wang Y Yaxuan Liu R Runxi Guo (School of Information Science and Engineering, Hebei University of Science and Technology 2 , Shijiazhuang 050018,) H Han Zhang H Huamu Xie (School of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University 4 , Beijing 100871,) Y Yee Sin Ang (Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design 6 , Singapore 487372,) S Shibo Fang

Abstract

Hydrostatic deformation is an effective approach for tuning the quantum properties of color centers in diamond, with significant implications for quantum sensing, computing, and communication. Compared to the widely studied nitrogen-vacancy (NV) centers, silicon-vacancy (SiV) centers exhibit more than a tenfold increase in coherent photon emission. In this work, we investigate the effects of hydrostatic pressure and tension on the SiV center in diamond using first-principles calculations with the r2SCAN meta-GGA (Generalized Gradient Approximation) functional. We demonstrate that under hydrostatic tension corresponding to an isotropic expansion exceeding 4%, the SiV center undergoes spontaneous symmetry breaking from the inversion-symmetric D3d structure to the asymmetric C3v configuration, similar to that of the NV center. Within the hydrostatic compression and tension range corresponding to isotropic deformations of −8%–4%, the optical properties and hyperfine parameters of the SiV center change monotonically, indicating promising potential for pressure- or deformation-sensing applications. A microscopic explanation of these trends is provided from an electronic structure perspective. The r2SCAN meta-GGA functional shows high accuracy in calculating hyperfine parameters, in agreement with experimental results. This study enhances our understanding of the optical properties and hyperfine interactions of SiV defects in diamond, laying the groundwork for their potential use in hydrostatic pressure or strain sensing applications.

Article Details

Volume / Issue Vol. 128, Issue 5
Published February 02, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

Y

Yunliang Yue

School of Information Engineering, Yangzhou University 1 , Yangzhou 225127,

M

Min Wang

Y

Yaxuan Liu

R

Runxi Guo

School of Information Science and Engineering, Hebei University of Science and Technology 2 , Shijiazhuang 050018,

H

Han Zhang

H

Huamu Xie

School of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University 4 , Beijing 100871,

Y

Yee Sin Ang

Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design 6 , Singapore 487372,

S

Shibo Fang