Effective reduction in thermal conductivity by high-density dislocations in SrTiO3

J Jinxue Ding (Institute for Applied Materials, Karlsruhe Institute of Technology 1 , Karlsruhe 76131,) J Jiawen Zhang J Jinfeng Dong (School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore) K Kimitaka Higuchi (Institute of Materials and Systems for Sustainability, Nagoya University 4 , Nagoya, Aichi 464-8601,) A Atsutomo Nakamura (Graduate School of Engineering Science, Osaka University 5 , Osaka, Toyonaka 560-8531,) W Wenjun Lu (Key Lab of Sustainable Low-Carbon Technologies for Textile Dyeing and Finishing, Ministry of Education, College of Chemistry and Chemical Engineering) B Bo Sun X Xufei Fang (Institute for Applied Materials, Karlsruhe Institute of Technology 1 , Karlsruhe 76131,)

Abstract

Decreasing thermal conductivity is important for designing efficient thermoelectric devices. Traditional engineering strategies have focused on point defects and interface design. Recently, dislocations as line defects have emerged as an additional tool for regulating thermal conductivity. In ceramics-based thermoelectric materials, the key challenge lies in achieving a sufficiently high dislocation density to effectively scatter phonons, as the typical dislocation density in ceramics after bulk deformation is constrained to ∼1012 m−2. In this work, we adopted the mechanical imprinting method and achieved a dislocation density of ∼1015 m−2 in single-crystal SrTiO3, which is known for its room-temperature plasticity and acts as a promising material for thermoelectric applications. Using the time-domain thermoreflectance method, we measured a ∼50% reduction in thermal conductivity over a broad temperature range (80–400 K) with the engineered high-density dislocations. These results suggest that tuning dislocations could offer an alternative path to minimizing thermal conductivity for engineering thermoelectric materials.

Article Details

Volume / Issue Vol. 126, Issue 25
Published June 23, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

J

Jinxue Ding

Institute for Applied Materials, Karlsruhe Institute of Technology 1 , Karlsruhe 76131,

J

Jiawen Zhang

J

Jinfeng Dong

School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

K

Kimitaka Higuchi

Institute of Materials and Systems for Sustainability, Nagoya University 4 , Nagoya, Aichi 464-8601,

A

Atsutomo Nakamura

Graduate School of Engineering Science, Osaka University 5 , Osaka, Toyonaka 560-8531,

W

Wenjun Lu

Key Lab of Sustainable Low-Carbon Technologies for Textile Dyeing and Finishing, Ministry of Education, College of Chemistry and Chemical Engineering

B

Bo Sun

X

Xufei Fang

Institute for Applied Materials, Karlsruhe Institute of Technology 1 , Karlsruhe 76131,