Effect of ALD temperature on the polarization switching dynamics of BEOL-compatible Hf0.5Zr0.5O2 ferroelectric film

Abstract

HfO2-based ferroelectric materials offer a promising alternative for next-generation memory technology. Atomic layer deposition (ALD) temperature can significantly influence the physical and chemical properties of films, enabling compatibility with back-end-of-line (BEOL) thermal budgets; however, it also inevitably affects polarization switching dynamics, warranting further investigation. In this work, BEOL-compatible Hf0.5Zr0.5O2 (HZO) films are fabricated at various ALD temperatures, and their polarization switching dynamics is characterized using the nucleation-limited switching model. Higher ALD temperatures result in faster polarization switching speeds and reduced asymmetry during program and erase stages, while lower ALD temperatures promote uniform polarization, although capacitors across all temperatures display similar remnant polarization (Pr) values after wakeup. Detailed analysis suggests that the influence of ALD temperature on preexisting oxygen vacancies (Vo) may be the underlying factor.